savantic semiconductor product specification silicon pnp power transistors 2SB1005 d escription with to-220c package high dc current gain darlington applications for audio frequency power amplifier applications pinning pin description 1 base 2 collector; connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -50 v v ceo collector-emitter voltage open base -50 v v ebo emitter-base voltage open collector -5 v i c collector current-dc -4 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1005 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-30ma, i b =0 -50 v v (br)cbo collector-base breakdown voltage i c =-1ma, i e =0 -50 v v cesat collector-emitter saturation voltage i c =-1.5a ,i b =-30ma -2.5 v v cesat collector-emitter saturation voltage i c =-4a ,i b =-40ma -4.0 v i cbo collector cut-off current v cb =-50v, i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -2.0 ma h fe-1 dc current gain i c =-1.5a ; v ce =-3v 750 h fe-2 dc current gain i c =-4a ; v ce =-3v 100 v f diode forward voltage i f =-4a 3.5 v
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1005 package outline fig.2 outline dimensions
|
